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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):35 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):20 mA @ 15 V
  • Current Drain (Id) - Max:-

 

  • Voltage - Cutoff (VGS off) @ Id:3 V @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):30 Ohms
  • Power - Max:350 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package:TO-92-3

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