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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Not For New Designs
  • FET Type:P-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):2 mA @ 15 V
  • Current Drain (Id) - Max:-

 

  • Voltage - Cutoff (VGS off) @ Id:1 V @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds:7pF @ 15V
  • Resistance - RDS(On):-
  • Power - Max:225 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

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