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Technical Details

  • Series:-
  • Package:Tape & Box (TB)
  • Part Status:Obsolete
  • FET Type:P-Channel
  • Voltage - Breakdown (V(BR)GSS):30 V
  • Drain to Source Voltage (Vdss):30 V
  • Current - Drain (Idss) @ Vds (Vgs=0):2 mA @ 15 V
  • Current Drain (Id) - Max:-

 

  • Voltage - Cutoff (VGS off) @ Id:1 V @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds:8pF @ 10V (VGS)
  • Resistance - RDS(On):250 Ohms
  • Power - Max:400 mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package:TO-92

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