NSVEMT1DXV6T5G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Transistor Type:2 PNP (Dual)
• Current - Collector (Ic) (Max):100mA
• Voltage - Collector Emitter Breakdown (Max):60V
• Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max):500pA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
• Power - Max:500mW
• Frequency - Transition:140MHz
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-563, SOT-666
• Supplier Device Package:SOT-563