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Technical Details

  • Series:-
  • Package:Tray
  • Part Status:Active
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):10mA
  • Voltage - Collector Emitter Breakdown (Max):2V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max):100pA (ICBO)

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:1500 @ 10µA, 1V
  • Power - Max:500mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die

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