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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):15V
  • Frequency - Transition:1GHz
  • Noise Figure (dB Typ @ f):3.3dB @ 836MHz
  • Gain:11.6dB

 

  • Power - Max:6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 250mA, 3V
  • Current - Collector (Ic) (Max):1.2A
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package:8-SOIC-EP

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