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Technical Details

  • Series:-
  • Package:Bag
  • Part Status:Active
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):14V
  • Frequency - Transition:2GHz
  • Noise Figure (dB Typ @ f):3dB @ 500MHz
  • Gain:15dB

 

  • Power - Max:250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 10mA, 10V
  • Current - Collector (Ic) (Max):50mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92

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