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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:2GHz
  • Noise Figure (dB Typ @ f):5dB @ 200MHz
  • Gain:15dB

 

  • Power - Max:350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 3mA, 1V
  • Current - Collector (Ic) (Max):50mA
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3

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