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Technical Details

  • Series:-
  • Package:Tray
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):4V
  • Frequency - Transition:16GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:5.2dB

 

  • Power - Max:250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 20mA, 2V
  • Current - Collector (Ic) (Max):80mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die

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