NSVBC124EPDXV6T1G
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSS SOT563 DUAL RSTR XSTR
- CategoryTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Datasheet NSVBC124EPDXV6T1G Datasheet
-
ECAD Model
- Share
In Stock: 180
Can ship immediately
Pricing:
- 1$0.11544
- 4,000$0.08856
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Technical Details
- Series:Automotive, AEC-Q101
- Package:Tape & Reel (TR)
- Part Status:Active
- Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):100mA
- Voltage - Collector Emitter Breakdown (Max):50V
- Resistor - Base (R1):22kOhms
- Resistor - Emitter Base (R2):22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max):500nA
- Frequency - Transition:-
- Power - Max:339mW
- Mounting Type:Surface Mount
- Package / Case:SOT-563, SOT-666
- Supplier Device Package:SOT-563
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