GB100XCP12-227

GeneSiC Semiconductor
In Stock: 165

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • IGBT Type:PT
  • Configuration:Single
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):100 A
  • Power - Max:-
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 100A

 

  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:8.55 nF @ 25 V
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4
  • Supplier Device Package:SOT-227

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