NXH350N100H4Q2F2S1G

ON Semiconductor
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Technical Details

  • Series:-
  • Package:Tray
  • Part Status:Active
  • IGBT Type:Trench Field Stop
  • Configuration:Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max):1000 V
  • Current - Collector (Ic) (Max):303 A
  • Power - Max:276 W
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 375A

 

  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:24.146 nF @ 20 V
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:42-PIM/Q2PACK (93x47)

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