FJV4101RMTF

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Transistor Type:PNP - Pre-Biased
• Current - Collector (Ic) (Max):100 mA
• Voltage - Collector Emitter Breakdown (Max):50 V
• Resistor - Base (R1):4.7 kOhms
• Resistor - Emitter Base (R2):4.7 kOhms

• DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max):100nA (ICBO)
• Frequency - Transition:200 MHz
• Power - Max:200 mW
• Mounting Type:Surface Mount
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:SOT-23-3