MUN2213JT1G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Transistor Type:NPN - Pre-Biased
• Current - Collector (Ic) (Max):100 mA
• Voltage - Collector Emitter Breakdown (Max):50 V
• Resistor - Base (R1):47 kOhms
• Resistor - Emitter Base (R2):47 kOhms

• DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max):500nA
• Frequency - Transition:-
• Power - Max:338 mW
• Mounting Type:Surface Mount
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:SC-59