NSBC115TF3T5G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Transistor Type:NPN - Pre-Biased
• Current - Collector (Ic) (Max):100 mA
• Voltage - Collector Emitter Breakdown (Max):50 V
• Resistor - Base (R1):100 kOhms
• Resistor - Emitter Base (R2):-

• DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
• Current - Collector Cutoff (Max):500nA
• Frequency - Transition:-
• Power - Max:254 mW
• Mounting Type:Surface Mount
• Package / Case:SOT-1123
• Supplier Device Package:SOT-1123