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Technical Details

  • Series:-
  • Package:Box
  • Part Status:Obsolete
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 Ohms
  • Resistor - Emitter Base (R2):22 Ohms

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 250µ, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:-
  • Power - Max:200 mW
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-

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