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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • Transistor Type:NPN - Pre-Biased + Diode
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:300 mW
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Short Body
  • Supplier Device Package:TO-92S

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