PBRN123YK,115

NXP Semiconductors
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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)
  • Part Status:Obsolete
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):10 kOhms

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:500 @ 300mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:1.15V @ 8mA, 800mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250 mW
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SMT3; MPAK

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