STGYA120M65DF2
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRENCH GATE FIELD-STOP IGBT, M S
- CategoryTransistors - IGBTs - Single
- Datasheet STGYA120M65DF2 Datasheet
-
ECAD Model
- Share
In Stock: 712
Can ship immediately
Pricing:
- 1$11.69
- 10$10.81472
- 100$9.27735
- 600$8.35522
- 1,200$7.75756
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Technical Details
- Series:M
- Package:Tube
- Part Status:Active
- IGBT Type:NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):650 V
- Current - Collector (Ic) (Max):160 A
- Current - Collector Pulsed (Icm):360 A
- Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 120A
- Power - Max:625 W
- Switching Energy:1.8mJ (on), 4.41mJ (off)
- Input Type:Standard
- Gate Charge:420 nC
- Td (on/off) @ 25°C:66ns/185ns
- Test Condition:400V, 120A, 4.7Ohm, 15V
- Reverse Recovery Time (trr):202 ns
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3 Exposed Pad
- Supplier Device Package:MAX247™
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