DGTD65T50S1PT

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• IGBT Type:Field Stop
• Voltage - Collector Emitter Breakdown (Max):650 V
• Current - Collector (Ic) (Max):100 A
• Current - Collector Pulsed (Icm):200 A
• Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 50A
• Power - Max:375 W
• Switching Energy:770µJ (on), 550µJ (off)

• Input Type:Standard
• Gate Charge:287 nC
• Td (on/off) @ 25°C:58ns/328ns
• Test Condition:400V, 50A, 7.9Ohm, 15V
• Reverse Recovery Time (trr):80 ns
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-247-3
• Supplier Device Package:TO-247