HGT1S20N60A4S9A

ON Semiconductor
In Stock: 128

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):70 A
  • Current - Collector Pulsed (Icm):280 A
  • Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 20A
  • Power - Max:290 W
  • Switching Energy:105µJ (on), 150µJ (off)

 

  • Input Type:Standard
  • Gate Charge:142 nC
  • Td (on/off) @ 25°C:15ns/73ns
  • Test Condition:390V, 20A, 3Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB

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