APT40GP60SG

Microsemi
In Stock: 156

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Technical Details

  • Series:POWER MOS 7®
  • Package:Tube
  • Part Status:Active
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):100 A
  • Current - Collector Pulsed (Icm):160 A
  • Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 40A
  • Power - Max:543 W
  • Switching Energy:385µJ (on), 352µJ (off)

 

  • Input Type:Standard
  • Gate Charge:135 nC
  • Td (on/off) @ 25°C:20ns/64ns
  • Test Condition:400V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package:D3 [S]

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