IXBH28N170A

Technical Details

• Series:BIMOSFET™
• Package:Tube
• Part Status:Active
• IGBT Type:-
• Voltage - Collector Emitter Breakdown (Max):1700 V
• Current - Collector (Ic) (Max):30 A
• Current - Collector Pulsed (Icm):60 A
• Vce(on) (Max) @ Vge, Ic:6V @ 15V, 14A
• Power - Max:300 W
• Switching Energy:1.2mJ (off)

• Input Type:Standard
• Gate Charge:105 nC
• Td (on/off) @ 25°C:35ns/265ns
• Test Condition:850V, 14A, 10Ohm, 15V
• Reverse Recovery Time (trr):360 ns
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-247-3
• Supplier Device Package:TO-247AD (IXBH)