APT102GA60B2

Microchip Technology
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Technical Details

  • Series:POWER MOS 8™
  • Package:Tube
  • Part Status:Obsolete
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):183 A
  • Current - Collector Pulsed (Icm):307 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 62A
  • Power - Max:780 W
  • Switching Energy:1.354mJ (on), 1.614mJ (off)

 

  • Input Type:Standard
  • Gate Charge:294 nC
  • Td (on/off) @ 25°C:28ns/212ns
  • Test Condition:400V, 62A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3 Variant
  • Supplier Device Package:-

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