RJP65T43DPQ-A0#T2

Renesas Electronics America
In Stock: 114

Can ship immediately

Pricing:

Call for price or sumbit a RFQ

Quote It

Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Active
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 20A
  • Power - Max:150 W
  • Switching Energy:170µJ (on), 130µJ (off)

 

  • Input Type:Standard
  • Gate Charge:69 nC
  • Td (on/off) @ 25°C:35ns/105ns
  • Test Condition:400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247A

Related Products


RJP65T54DPM-A0#T2

IGBT TRENCH 650V 60A TO-3PFP

RJP65T54DPM-A0#T2 Datasheet

Call for price


1214-55P

TRANSISTOR

Call for price


75099

TRANSISTOR

Call for price


78124

TRANSISTOR

Call for price


NGTD13T65F2WP

IGBT TRENCH FIELD STOP 650V DIE

NGTD13T65F2WP Datasheet

Call for price


NGTD14T65F2WP

IGBT TRENCH FIELD STOP 650V DIE

NGTD14T65F2WP Datasheet

Call for price


NGTD17T65F2WP

IGBT TRENCH FIELD STOP 650V DIE

NGTD17T65F2WP Datasheet

Call for price


NGTD20T120F2WP

IGBT TRENCH FIELD STOP 1200V DIE

NGTD20T120F2WP Datasheet

Call for price


NGTD21T65F2WP

IGBT TRENCH FIELD STOP 650V DIE

NGTD21T65F2WP Datasheet

Call for price


NGTD23T120F2WP

IGBT TRENCH FIELD STOP 1200V DIE

NGTD23T120F2WP Datasheet

Call for price


Top