NGTB50N65S1WG

ON Semiconductor
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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):140 A
  • Current - Collector Pulsed (Icm):140 A
  • Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 50A
  • Power - Max:300 W
  • Switching Energy:1.25mJ (on), 530µJ (off)

 

  • Input Type:Standard
  • Gate Charge:128 nC
  • Td (on/off) @ 25°C:75ns/128ns
  • Test Condition:400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr):70 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247

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