EPC2106
EPC
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGANFET TRANS SYM 100V BUMPED DIE
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet EPC2106 Datasheet
-
ECAD Model
- Share
In Stock: 1,321
Can ship immediately
Pricing:
- 1$1.82
- 2,500$0.81536
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Technical Details
- Series:eGaN®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Half Bridge)
- FET Feature:GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):100V
- Current - Continuous Drain (Id) @ 25°C:1.7A
- Rds On (Max) @ Id, Vgs:70mOhm @ 2A, 5V
- Vgs(th) (Max) @ Id:2.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs:0.73nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:75pF @ 50V
- Power - Max:-
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
