SI6562CDQ-T1-GE3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N and P-Channel
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:6.7A, 6.1A
• Rds On (Max) @ Id, Vgs:22mOhm @ 5.7A, 4.5V

• Vgs(th) (Max) @ Id:1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:850pF @ 10V
• Power - Max:1.6W, 1.7W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package:8-TSSOP