SI7998DP-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 30V 25A PPAK SO-8
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI7998DP-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 10,659
Can ship immediately
Pricing:
- 1$1.67
- 3,000$0.78251
- 6,000$0.74577
- 15,000$0.71953
Quote It
Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:25A, 30A
- Rds On (Max) @ Id, Vgs:9.3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 15V
- Power - Max:22W, 40W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8 Dual
- Supplier Device Package:PowerPAK® SO-8 Dual
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