SI4599DY-T1-GE3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N and P-Channel
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):40V
• Current - Continuous Drain (Id) @ 25°C:6.8A, 5.8A
• Rds On (Max) @ Id, Vgs:35.5mOhm @ 5A, 10V

• Vgs(th) (Max) @ Id:3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:640pF @ 20V
• Power - Max:3W, 3.1W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO