QS6J11TR

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 P-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):12V
• Current - Continuous Drain (Id) @ 25°C:2A
• Rds On (Max) @ Id, Vgs:105mOhm @ 2A, 4.5V

• Vgs(th) (Max) @ Id:1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:6.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:770pF @ 6V
• Power - Max:600mW
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package:TSMT6 (SC-95)