SSM6N16FUTE85LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 20V 0.1A US6
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SSM6N16FUTE85LF Datasheet
-
ECAD Model
- Share
In Stock: 5,460
Can ship immediately
Pricing:
- 1$0.52
- 3,000$0.07904
- 6,000$0.07114
- 15,000$0.06323
- 30,000$0.05928
- 75,000$0.05533
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Standard
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:100mA
- Rds On (Max) @ Id, Vgs:3Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id:1.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:-
- Input Capacitance (Ciss) (Max) @ Vds:9.3pF @ 3V
- Power - Max:200mW
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Supplier Device Package:US6
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