BSC112N06LDATMA1

Technical Details

• Series:OptiMOS™-T2
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):60V
• Current - Continuous Drain (Id) @ 25°C:20A (Tc)
• Rds On (Max) @ Id, Vgs:11.2mOhm @ 17A, 10V

• Vgs(th) (Max) @ Id:2.2V @ 28µA
• Gate Charge (Qg) (Max) @ Vgs:55nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:4020pF @ 30V
• Power - Max:65W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-PowerVDFN
• Supplier Device Package:PG-TDSON-8-4