BSM180D12P2E002

ROHM Semiconductor
In Stock: 157

Can ship immediately

Pricing:
  • 1$676.5

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:2 N-Channel (Half Bridge)
  • FET Feature:Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:204A (Tc)
  • Rds On (Max) @ Id, Vgs:-

 

  • Vgs(th) (Max) @ Id:4V @ 35.2mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:18000pF @ 10V
  • Power - Max:1360W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module

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