SI5517DU-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N/P-CH 20V 6A CHIPFET
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI5517DU-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 323
Can ship immediately
Pricing:
- 1$1.23
- 3,000$0.5412
- 6,000$0.51414
- 15,000$0.49481
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N and P-Channel
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:6A
- Rds On (Max) @ Id, Vgs:39mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:16nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:520pF @ 10V
- Power - Max:8.3W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® ChipFET™ Dual
- Supplier Device Package:PowerPAK® ChipFet Dual
