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Technical Details

  • Series:-
  • Package:Box
  • Part Status:Active
  • FET Type:2 N-Channel (Half Bridge)
  • FET Feature:Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss):1200V
  • Current - Continuous Drain (Id) @ 25°C:450A
  • Rds On (Max) @ Id, Vgs:3.7mOhm @ 450A, 15V

 

  • Vgs(th) (Max) @ Id:3.6V @ 132mA
  • Gate Charge (Qg) (Max) @ Vgs:1330nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds:38000pF @ 800V
  • Power - Max:850W
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module

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