BSO207PHXUMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPFET, 5A I(D), 20V, 0.045OHM, 2-
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet BSO207PHXUMA1 Datasheet
-
ECAD Model
- Share
In Stock: 113
Can ship immediately
Pricing:
- 1$0.41
- 2,500$0.41
Quote It
Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:2 P-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:5A
- Rds On (Max) @ Id, Vgs:45mOhm @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id:1.2V @ 44µA
- Gate Charge (Qg) (Max) @ Vgs:16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:1650pF @ 15V
- Power - Max:1.6W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:PG-DSO-8
Related Products
POWER FIELD-EFFECT TRANSISTOR, 3
- 1: $0.41000
3A, 200V, 2.4OHM, P-CHANNEL, POW
- 1: $0.41000
P-CHANNEL SILICON MOSFET
- 1: $0.41000
N-CHANNEL MOSFET
- 1: $0.41000
30V DUAL ASYMMETRIC N-CHANNEL MO
- 1: $0.98000
MOSFET - POWER, DUAL N-CHANNEL,
- 1: $0.95000
N CHANNEL POWER TRENCH MOSFET,
- 1: $0.44000
12A, 60V, 0.15OHM, N-CHANNEL,
- 1: $0.44000