SSM6L35FU(TE85L,F)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N/P-CH 20V 0.18A/0.1A US6
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SSM6L35FU(TE85L,F) Datasheet
-
ECAD Model
- Share
In Stock: 118
Can ship immediately
Pricing:
- 1$0.09306
- 3,000$0.09153
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N and P-Channel
- FET Feature:Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:180mA, 100mA
- Rds On (Max) @ Id, Vgs:3Ohm @ 50mA, 4V
- Vgs(th) (Max) @ Id:1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Input Capacitance (Ciss) (Max) @ Vds:9.5pF @ 3V
- Power - Max:200mW
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Supplier Device Package:US6
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