SSM6N61NU,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 20V 4A UDFN
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SSM6N61NU,LF Datasheet
-
ECAD Model
- Share
In Stock: 160
Can ship immediately
Pricing:
- 1$0.16539
- 3,000$0.16539
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:4A
- Rds On (Max) @ Id, Vgs:33mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:410pF @ 10V
- Power - Max:2W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-WDFN Exposed Pad
- Supplier Device Package:6-UDFNB (2x2)
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