In Stock: 116

Can ship immediately

Pricing:
  • 1$0.4
  • 3,800$0.4

Quote It

Technical Details

  • Series:HEXFET®
  • Package:Bulk
  • Part Status:Active
  • FET Type:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:8A
  • Rds On (Max) @ Id, Vgs:21mOhm @ 8A, 10V

 

  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2675pF @ 25V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO

Related Products


ECH8619-TL-E

N-CHANNEL AND P-CHANNEL SILICON

ECH8619-TL-E Datasheet
  • 1: $0.40557

IPG20N06S415ATMA1

IPG20N06S4-15- 55V-60V N-CHANNEL

IPG20N06S415ATMA1 Datasheet
  • 1: $0.53000
  • 5000: $0.52881

IRF7101TRPBF

MOSFET 2N-CH 20V 3.5A 8-SOIC

IRF7101TRPBF Datasheet
  • 1: $0.87000
  • 4000: $0.42394
  • 8000: $0.39781

SD5001N PDIP 16L

QUAD HIGH SPEED N-CHANNEL LATERA

  • 1: $4.63000

CAB016M12FM3

1200V SIC H-BRIDGE MODULE

  • 1: $74.81000

CAB011M12FM3

1200V SIC H-BRIDGE MODULE

  • 1: $94.50000

CCB032M12FM3

1200V SIC 6-PACK MODULE

  • 1: $111.56000

CCB021M12FM3

1200V SIC 6-PACK MODULE

  • 1: $157.50000

CAB008M12GM3

1200V 2B HALF-BRIDGE

  • 1: $166.25000

CAB006M12GM3

1200V 2B HALF-BRIDGE

  • 1: $221.25000

Top