PMWD20XN,118

NXP Semiconductors
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Technical Details

  • Series:TrenchMOS™
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Obsolete
  • FET Type:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:10.4A
  • Rds On (Max) @ Id, Vgs:22mOhm @ 4.2A, 10V

 

  • Vgs(th) (Max) @ Id:1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:11.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:740pF @ 16V
  • Power - Max:4.2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP

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