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Technical Details

  • Series:HiPerFET™
  • Package:Bulk
  • Part Status:Active
  • FET Type:2 N-Channel (Dual)
  • FET Feature:Standard
  • Drain to Source Voltage (Vdss):200V
  • Current - Continuous Drain (Id) @ 25°C:84A
  • Rds On (Max) @ Id, Vgs:25mOhm @ 500mA, 10V

 

  • Vgs(th) (Max) @ Id:4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs:450nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:15000pF @ 25V
  • Power - Max:370W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Y4-M6
  • Supplier Device Package:Y4-M6

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