TPC8211(TE12L,Q,M)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 30V 5.5A SOP8
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet TPC8211(TE12L,Q,M) Datasheet
-
ECAD Model
- Share
In Stock: 113
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:5.5A
- Rds On (Max) @ Id, Vgs:36mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:1250pF @ 10V
- Power - Max:450mW
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package:8-SOP (5.5x6.0)
Related Products
MOSFET 2N-CH 60V 5A SOP8
Call for price
