APTM120VDA57T3G

Microsemi
In Stock: 184

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Technical Details

  • Series:POWER MOS 7®
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:2 N-Channel (Dual)
  • FET Feature:Standard
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:17A
  • Rds On (Max) @ Id, Vgs:684mOhm @ 8.5A, 10V

 

  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:5155pF @ 25V
  • Power - Max:390W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3

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