FDMS3660S-F121

ON Semiconductor
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Technical Details

  • Series:PowerTrench®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Obsolete
  • FET Type:2 N-Channel (Dual) Asymmetrical
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:13A, 30A
  • Rds On (Max) @ Id, Vgs:8mOhm @ 13A, 10V

 

  • Vgs(th) (Max) @ Id:2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1765pF @ 15V
  • Power - Max:1W
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:Power56

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