QJD1210SA1

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:2 N-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C:100A
• Rds On (Max) @ Id, Vgs:17mOhm @ 100A, 15V

• Vgs(th) (Max) @ Id:1.6V @ 34mA
• Gate Charge (Qg) (Max) @ Vgs:330nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds:8200pF @ 10V
• Power - Max:520W
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:Module