RJM0603JSC-00#13

Renesas Electronics America
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Technical Details

  • Series:Automotive, AEC-Q101
  • Package:-
  • Part Status:Obsolete
  • FET Type:3 N and 3 P-Channel (3-Phase Bridge)
  • FET Feature:Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:20A
  • Rds On (Max) @ Id, Vgs:20mOhm @ 10A, 10V

 

  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2600pF @ 10V
  • Power - Max:54W
  • Operating Temperature:175°C
  • Mounting Type:Surface Mount
  • Package / Case:20-SOIC (0.433", 11.00mm Width) Exposed Pad
  • Supplier Device Package:20-HSOP

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