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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:2 N-Channel (Dual) Asymmetrical
  • FET Feature:Standard
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:11.5A (Ta), 46A (Tc), 17A (Ta), 80A (Tc)
  • Rds On (Max) @ Id, Vgs:8.9mOhm @ 11.5A, 10V, 3.6mOhm @ 20A, 10V

 

  • Vgs(th) (Max) @ Id:2.4V @ 250µA, 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V, 38nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1110pF @ 15V, 5260pF @ 15V
  • Power - Max:1.9W (Ta), 31W (Tc), 2.1W (Ta), 78W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:8-DFN-EP (5x6)

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