2N4123
NTE Electronics, Inc.
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionT-NPN SI- GEN PUR AMP
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet 2N4123 Datasheet
-
ECAD Model
- Share
In Stock: 7,217
Can ship immediately
Pricing:
- 1$0.126
- 7,500$0.126
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Technical Details
- Series:-
- Package:Bag
- Part Status:Active
- Transistor Type:NPN
- Current - Collector (Ic) (Max):200 mA
- Voltage - Collector Emitter Breakdown (Max):30 V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 2mA, 1V
- Power - Max:350 mW
- Frequency - Transition:250MHz
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package:TO-92
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