MJD122T4G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER BIPOLAR TRANSISTOR, 8A, 10
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet MJD122T4G Datasheet
-
ECAD Model
- Share
In Stock: 150,547
Can ship immediately
Pricing:
- 1$0.21
- 2,500$0.08618
- 5,000$0.08023
- 12,500$0.07924
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Transistor Type:NPN - Darlington
- Current - Collector (Ic) (Max):8 A
- Voltage - Collector Emitter Breakdown (Max):100 V
- Vce Saturation (Max) @ Ib, Ic:4V @ 80mA, 8A
- Current - Collector Cutoff (Max):10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 4A, 4V
- Power - Max:1.75 W
- Frequency - Transition:4MHz
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package:DPAK
Related Products
LOW VCE(SAT) TRANSISTOR, PNP, 35
- 1: $0.21000
- 3000: $0.21000
